SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 2 i d @ tc = 100c continuous drain current, v gs @ 10v 1.3 i dm pulsed drain current 8 a power dissipation 34 w p d @tc = 25c linear derating factor 0.27 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=30mh 115 mj i as avalanche current @ l=30mh 2.52 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 600v r ds (on) 3.7 (typ.) i d 2a to-252 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 3.7 /w r ja junction-to-ambient (t 10s) 110 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 3.7 4.2 v gs =10v,i d = 1.0a r ds(on) static drain-to-source on-resistance 8.2 t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.2 v t j = 125 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 5.67 q gs gate-to-source charge 1.74 q gd gate-to-drain("miller") charge 1.99 nc i d = 2.0a, v ds =480v, v gs = 10v t d(on) turn-on delay time 9.2 t r rise time 23.4 t d(off) turn-off delay time 15.3 t f fall time 20.1 ns v gs =10v, vds=300v, r gen =25, id=2.0a c iss input capacitance 250.1 c oss output capacitance 35.7 c rss reverse transfer capacitance 1.1 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 2 a i sm pulsed source current (body diode) 8 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.4 v i s =2.0a, v gs =0v t rr reverse recovery time 356.8 ns q rr reverse recovery charge 1030 nc t j = 25c, i f =2a, di/dt = 100a/s
SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage
SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 0.400 0.900 1.400 0.016 0.035 0.055 b 5.350 5.850 6.350 0.211 0.230 0.250 c 4.800 5.300 5.800 0.189 0.209 0.228 d 0.980 0.100 1.020 0.039 0.004 0.040 e 5.800 6.300 6.800 0.228 0.248 0.268 f 2.200 2.300 2.400 0.087 0.091 0.094 g 0.600 0.700 0.800 0.024 0.028 0.031 h 0.200 0.700 1.200 0.008 0.028 0.047 i 0.700 0.800 0.900 0.028 0.031 0.035 j 0.408 0.508 0.608 0.016 0.020 0.024 k 2.050 2.300 2.550 0.081 0.091 0.100 l 0.550 0.800 1.050 0.022 0.031 0.041 m 0.408 0.508 0.608 0.016 0.020 0.024 n 1.050 1.300 1.550 0.041 0.051 0.061 o 1.250 1.500 1.750 0.049 0.059 0.069 symbol dimension in millimeters dimension in inches to-252 package outline dimension
SSF2N60D2 600v n-channel mosfet preliminary www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: SSF2N60D2 package (available) to-252 dpak operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-252 80 50 4000 10 40000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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